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Amplifier device
Gain
G [dB]
Noise temperature
TRX [K]
Noise figure
FdB [dB]
Vacuum tube with control grid (triode, pentode)
10↔20
1600↔9000
8↔15
Vacuum tube with speed modulation (klystron, TWT)
20↔50
3000↔30000
10↔20
Parametric amplifier (varactor room temperature)
10↔15
75↔300
1↔3
Si BJT or JFET or MOSFET (room temperature)
10↔20
75-300
1↔3
GaAs FET or HEMT (room temperature)
10↔15
20↔120
75↔300
0.3↔1.5
GaAs FET or HEMT (cooled liquid-nitrogen 77K)
10↔15
7↔35
0.1↔0.5
Si or SiGe or InGaP MMIC amplifier
10↔25
170↔1600
2↔8
Operational amplifier
40↔100
104↔109
16↔66