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Material
Bandgap
ΔW[eV]
Electron
mobility
μn[cm2/Vs]
Hole
mobility
μp[cm2/Vs]
Dielectric
strength
Emax[V/cm]
Material
Bandgap
ΔW[eV]
Electron
mobility
μn[cm2/Vs]
Hole
mobility
μp[cm2/Vs]
Dielectric
strength
Emax[V/cm]
PbS
0.37
600
200
(UBR<2V)
Se
1.95
0.005
0.14
(UBR<25V)
PbSe
0.27
900
700
PbTe
0.32
1700
930
Cu2O
2.137
0.2
0.1
(UBR<8V)
Si
1.11
1400
450
3•105
Ge
0.67
3900
1900
105
Si1-xGex
3•105
SiO2
9
106-107
Si3N4
5.4
3•106
C(diamond)
5.5
2200
1800
106-107
3C-SiC
2.36
800
320
106
4H-SiC
3.23
900
120
3-5•106
6H-SiC
3.05
400
90
3-5•106
GaAs
1.43
5000
400
4•105
AlAs
2.16
1200
420
6•105
In1-xGaxAs
0.35-1.43
InP
1.344
5400
200
5•105
GaP
2.26
250
150
106
GaSb
0.726
3000
1000
50000
InAs
0.354
40000
400
40000
InSb
0.17
77000
850
1000
GaN
3.4
1800
30
5•106
AlN
6.28
300
14
1.2-1.8•106
InN
0.65
3200
BN
5.4
200
500
3-6•106
CdS
2.42
400
CdSe
1.74
650
CdTe
1.44
1100
100
Hg1-xCdxTe
0-1.5