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N +
(substrate)
P +
I (π or ν)
d ≡ layer I thickness
(diode turn-on time)
Layer I thickness d
Minority-carrier lifetime τ
Controlled
RF switch
~0.3μm
Adjustable
RF resistor
Protection
limiter
~3μm
~60μm
~10ns
~1μs
~100ns
Weak doping
π or ν ~1014cm-3
Au→τ↓ (turn-off)