Aktivni
15 – Noise of active components
Amplifier device
Gain
G [dB]
Noise tempe
rature TRX [K]
Noise figure
FdB [dB]
Vacuum tube with control
grid (triode, pentode)
10↔20
1600↔9000
8↔15
Vacuum tube with speed
modulation (klystron, TWT)
20↔50
3000↔30000
10↔20
Parametric amplifier
(room temperature)
10↔15
75↔300
1↔3
Si BJT, JFET or MOSFET
(room temperature)
10↔20
75-300
1↔3
GaAs FET or HEMT
(room temperature)
10↔15
20↔120
75↔300
0.3↔1.5
GaAs FET ali HEMT
(liquid-nitrogen 77K)
10↔15
7↔35
0.1↔0.5
Si or GaAs MMIC
amplifier
10↔25
170↔1600
2↔8
Operational amplifier
40↔100
104↔109
16↔66